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P4N150 0505E LH002 N4745 567M0 D100L WR300 24C25
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  Datasheet File OCR Text:
 SEMICONDUCTOR TECHNICAL SPECIFICATION
RECTRON
GDSGA0-500E GDSGA0-700E GDSGA0-900E GDSGA0-B00E
STANDARD GPP CHIP - 100MIL
PRODUCT SPECIFICATIONS
CHIPS FOR STD GPP/SOLDERING TYPE TYPE: GDSGA0 SERIES
CHIP APPEARANCE CHIP DIMENSIONS
CHIP SIZE
75mil 100mil
GDSGA0-500E
GDSGA0-700E
GDSGA0-900E GDSGA0-B00E
100 x 100 mils
Contact area
75 x 75 mils
Total CHIP THICKNESS
11 mils
10.2mil
11mil
SOLDERABLE METALLIZATION
Ni / Au
FEATURES * Silicon chip with Boron / Phosphorus dopants * Solderable metallization Ni / Au * Glass passivated junction
RATINGS Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current at Derating Case Temperature Maximum Instantaneous Forward Voltage at 3A DC Maximum Average Reverse Current at Rated DC Blocing Voltage Operating Temperature Range Storage Temperature Range @ TA=25OC @ TA=100OC
SYMBOL VR IO VF IR TJ T STG
GDSGA0-500E 400
GDSGA0-700E 600 3 1.1 5 300 150 -55 to + 150
GDSGA0-900E 800
GDSGA0-B00E 1000
UNITS Volts Amps Volts
uAmps
0 0
C C


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